MMIC class-F power amplifiers using field-plated GaN HEMTs
نویسنده
چکیده
Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating at 2.8GHz achieved a PAE of 46% with 37dBm output power and 7.0W/mm power density.
منابع مشابه
atedA GaN/GaN HEMTs
Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
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